Optical Bistability in a GaAs-Based Polariton Diode
نویسندگان
چکیده
منابع مشابه
Optical bistability in a GaAs-based polariton diode.
We report on a new type of optical nonlinearity in a polariton p-i-n microcavity. Abrupt switching between the strong and weak coupling regime is induced by controlling the electric field within the cavity. As a consequence, bistable cycles are observed for low optical powers (2-3 orders of magnitude less than for Kerr induced bistability). Signatures of switching fronts propagating through the...
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Yaroslav V. Kartashov,1,2 Vladimir V. Konotop,3 and Lluis Torner1 1ICFO-Institut de Ciencies Fotoniques, and Universitat Politecnica de Catalunya, Mediterranean Technology Park, 08860 Castelldefels (Barcelona), Spain 2Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow Region 142190, Russia 3Centro de Fı́sica Teórica e Computacional and Departamento de Fı́sica, Faculdade de Ci...
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Optical systems are being developed to reach the functionality and large-scale integration of electronic systems. Strides are being made to develop an on-chip optical system by designing and fabricating an Optical NanoElectroMechanical, ONEM, device structure based in a gallium arsenide material system. Gallium arsenide, a III-V compound semiconductor, was chosen due to its high-refractive inde...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2008
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.101.266402